PART |
Description |
Maker |
SN7002N |
SIPMOS Small-Signal-Transistor Low Voltage MOSFETs - SOT23, 60V, 5ohm, 0.2A
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSP613P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.13
|
Infineon
|
BSP170P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
BSS7728 BSS7728N |
Low Voltage MOSFETs - SOT23, 60V, RDSon = 5.0Ohm, 0.2A SIPMOS SMALL-SIGNAL-TRANSISTOR
|
Infineon Technologies AG
|
BSP88 |
Low Voltage MOSFETs - Small Signal MOSFET, 240V, SOT-223, RDSon=8.0 Ohm, 0.32A, SLL
|
Infineon
|
BSO204P |
OptiMOS -P Small-Signal-Transistor Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SO-8
|
Infineon Technologies A... Infineon Technologies AG
|
BSO201SP |
OptiMOS -P Small-Signal-Transistor Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SO-8
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSO200P03S |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8, Ron = 20m OptiMOS-P Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSV236SP |
OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体 Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363
|
Infineon Technologies AG
|
BSD223P |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363 OptiMOS -P Small-Signal-Transistor CHOKE RF COATED 1.8UH 10%
|
Infineon Technologies A... Infineon Technologies AG Philips Semiconductors
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
MGSF3442XT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
ON Semiconductor
|